Title :
Polytype heterostructures for electron tunneling devices
Author :
Beresford, R. ; Luo, L.F. ; Longenbach, K. ; Wang, W.I.
Author_Institution :
Dept. of Electr. Eng., Columbia Univ., New York, NY, USA
Abstract :
Polytype heterostructures of InAs-AlSb-GaSb exhibit interband tunneling due to the approximately 0.1-eV overlap of the InAs conduction band and the GaSb valence band. This broken-gap configuration results in a novel mechanism for negative differential resistance that has potential applications in high-speed devices. Nonresonant and resonant interband tunneling has been demonstrated, achieving peak-to-valley ratios at low temperature greater than 5:1 in single-barrier devices and greater than 60:1 in double-barrier devices. It is shown that distinct negative differential resistance characteristics can be obtained for thin (>
Keywords :
III-V semiconductors; aluminium compounds; equivalent circuits; gallium compounds; indium compounds; negative resistance; resonant tunnelling devices; semiconductor device models; semiconductor quantum wells; solid-state microwave devices; tunnelling; 200 GHz; EHF; GaSb valence band; InAs conduction band; InAs quantum wells; InAs-AlSb-GaSb; MM-wave devices; broken-gap configuration; current-voltage characteristics; double-barrier devices; electron tunneling devices; equivalent circuit model; high-speed devices; interband tunneling; millimetre wave operation; negative differential resistance; nonresonant tunnelling; peak-to-valley ratios; polytype heterostructures; resonant interband tunneling; resonant tunneling transistor; single-barrier devices; Conducting materials; Diodes; Doping; Electrons; Frequency; Gallium arsenide; Photonic band gap; Resonance; Resonant tunneling devices; Temperature;
Conference_Titel :
Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1989.74341
