A quantum-switched heterojunction bistable bipolar transistor

Author

Wu, M.C. ; Yang, L. ; Tsang, W.T.

Author_Institution

AT&T Bell Lab., Murray Hill, NJ, USA

fYear

1989

fDate

3-6 Dec. 1989

Firstpage

551

Lastpage

554

Abstract

A novel bistable transistor-the quantum-switched heterojunction bistable bipolar transistor-is described. The transistor has two current states. With increasing base-emitter voltage, the collector current is switched from high to low, while the base current is switched from low to high. Bistability is observed for a certain range of base voltage. The device has on/off ratios of 1.5 and 3.5 for the collector and the base currents at 77 K, respectively. Theoretical study shows that larger on/off ratios and room-temperature operation are possible with double barriers with higher current peak-to-valley ratios. This device has potential applications in implementing high-speed single-bipolar-transistor memories, gain-quenching in light-emitting devices, and optoelectronic switching.<>

Keywords

heterojunction bipolar transistors; semiconductor switches; 77 K; HBT; InP-InGaAs-InP; bistability; double barriers; gain-quenching; heterojunction bistable bipolar transistor; high-speed single-bipolar-transistor memories; light-emitting devices; optoelectronic switching; quantum switched transistor; room-temperature operation; Bipolar transistors; Double heterojunction bipolar transistors; Gold; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Logic devices; Resonant tunneling devices; Switches; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-0817-4

Type

conf

DOI

10.1109/IEDM.1989.74342

Filename

74342