Title :
Rapid thermal diffusion of phosphorus into silicon from doped oxide films [solar cell manufacture]
Author :
Slaoui, A. ; Hartiti, B. ; Muller, J.C. ; Stuck, R. ; Loghmarti, M. ; Siffert, P.
Author_Institution :
Laboratoire Phase, CNRS, Strasbourg, France
Abstract :
Rapid thermal annealing (RTA) was carried out on phosphosilicate glass (PSG) or phosphorus doped-spin-on glass (SOG) films deposited on <100> silicon substrate in the typical processing temperature range of 800-1000°C, to form n+p junctions. The sheet resistance, the total and active phosphorous profiles, and the minority carrier diffusion length using the surface photovoltage technique (SPV) have been measured on the processed samples. The results were compared to those obtained by conventional thermal annealing. It is shown that RTA is effective to achieve convenables sheet resistances and dopant profiles for solar cells in addition to an improvement in the silicon bulk properties
Keywords :
annealing; carrier lifetime; elemental semiconductors; minority carriers; p-n homojunctions; phosphorus; semiconductor device manufacture; semiconductor doping; silicon; solar cells; thermal diffusion; 800 to 1000 degC; Si:P; bulk properties; carrier lifetime; dopant profiles; minority carrier diffusion length; p-n homojunctions; phosphorus doped-spin-on glass; phosphosilicate glass; rapid thermal annealing; semiconductor device manufacture; sheet resistance; solar cell manufacture; surface photovoltage technique; thermal diffusion; Electrical resistance measurement; Glass; Length measurement; Photovoltaic cells; Rapid thermal annealing; Rapid thermal processing; Semiconductor films; Silicon; Surface resistance; Temperature distribution;
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
DOI :
10.1109/PVSC.1991.169255
