DocumentCode :
2529653
Title :
Novel single-device “XOR” AND “AND” gates for high speed, very low power LSI mechanical processors
Author :
Chowdhury, Faisal K. ; Chappanda, Karumbaiah N. ; Saab, Daniel ; Tabib-Azar, Massood
Author_Institution :
Univ. of Utah, Salt Lake City, UT, USA
fYear :
2011
fDate :
5-9 June 2011
Firstpage :
1100
Lastpage :
1103
Abstract :
We discuss novel functional MEMS/NEMS structures that enable implementation of universal logic gates such as XOR, AND, NAND, NOT, etc. in a single device instead of using 6-14 individual switches used in CMOS. By reducing the number of devices, our approach improves yield, reproducibility and speed and simplifies implementation of circuits such as adders and multiplexers. We show the feasibility of this novel approach through fabrication and testing of XOR, AND and related circuits such as a 2 bit full adder and multiplexer. The XOR gates with ~1.5V turn-on voltage at 50 MHz with >;109 cycles of reliable operations are reported. We also discuss the operation of XOR without deterioration at high temperature and in 90 kW ionizing radiation for 120 minutes.
Keywords :
CMOS logic circuits; large scale integration; logic gates; micromechanical devices; multiplexing equipment; nanoelectromechanical devices; testing; AND gate; CMOS; MEMS structure; NEMS structure; XOR gate; adder; frequency 50 MHz; multiplexer; power 90 kW; power LSI mechanical processor; universal logic gate; Adders; Bridge circuits; Electrodes; Logic gates; Silicon; Switches; Tungsten; MEMS logic gate; MEMS microprocessors; MEMS processors; radiation-hard devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems Conference (TRANSDUCERS), 2011 16th International
Conference_Location :
Beijing
ISSN :
Pending
Print_ISBN :
978-1-4577-0157-3
Type :
conf
DOI :
10.1109/TRANSDUCERS.2011.5969186
Filename :
5969186
Link To Document :
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