Title :
Extremely high current density, low peak voltage, pseudomorphic In/sub 0.53/Ga/sub 0.47/As/AlAs/InAs resonant tunneling diodes
Author :
Broekaert, T.P.E. ; Fonstad, C.G.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA
Abstract :
A fundamental objective in the design of resonant tunneling diodes for microwave oscillators and digital switching is the achievement of the highest possible peak current density at the lowest possible peak voltage, while maintaining a high peak-to-valley current ratio and wide valley region. It is demonstrated that by combining very thin AlAs barriers with relatively wide InAs wells, within bounding regions of InGaAs lattice-matched to InP, it is possible to achieve room-temperature peak current densities in excess of 450 kA/cm/sup 2/, the highest ever reported for resonant tunneling diodes, at peak voltages as low as 0.7 V. The corresponding peak-to-valley current ratio is approximately 3.6. By working within the InGaAlAs quaternary system, the device designer has a great deal of flexibility and latitude in sculpturing the device structure to optimize a number of specific performance characteristics.<>
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium arsenide; indium compounds; resonant tunnelling devices; semiconductor switches; solid-state microwave devices; tunnel diodes; 0.7 V; In/sub 0.53/Ga/sub 0.47/As-AlAs-InAs; InGaAlAs quaternary system; InGaAs-InP; digital switching; high current density; lattice matching; low peak voltage; microwave oscillators; pseudomorphic type; resonant tunneling diodes; thin AlAs barriers; wide InAs wells; Capacitance; Current density; Diodes; Electrooptic effects; Indium gallium arsenide; Indium phosphide; Low voltage; Materials science and technology; Resonance; Resonant tunneling devices;
Conference_Titel :
Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1989.74344
