Title :
Multi-threshold CMOS design for low power digital circuits
Author :
Hemantha, S. ; Dhawan, Amit ; Kar, Haranath
Author_Institution :
Dept. of Electron. & Commun. Eng., Motilal Nehru Nat. Inst. of Technol., Allahabad
Abstract :
Multi-threshold CMOS (MTCMOS) power gating is a design technique in which a power gating transistor is connected between the logic transistors and either power or ground, thus creating a virtual supply rail or virtual ground rail, respectively. Power gating transistor sizing, transition (sleep mode to active mode) current, short circuit current and transition time are design issues for power gating design. The use of power gating design results in the delay overhead in the active mode. If both nMOS and pMOS sleep transistor are used in power gating, delay overhead will increase. This paper proposes the design methodology for reducing the delay of the logic circuits during active mode. This methodology limits the maximum value of transition current to a specified value and eliminates short circuit current. Experiment results show 16.83% reduction in the delay.
Keywords :
CMOS digital integrated circuits; MOSFET; digital circuits; integrated circuit design; logic circuits; low-power electronics; short-circuit currents; delay overhead; logic circuit delay; logic transistors; low power digital circuits; multithreshold CMOS design; nMOS sleep transistor; pMOS sleep transistor; power gating transistor; short circuit current; virtual ground rail; virtual supply rail; CMOS digital integrated circuits; CMOS logic circuits; Delay; Design methodology; Digital circuits; Logic circuits; Logic design; MOS devices; Rails; Short circuit currents; Low power; Multi-threshold CMOS (MTCMOS); Power gating; component;
Conference_Titel :
TENCON 2008 - 2008 IEEE Region 10 Conference
Conference_Location :
Hyderabad
Print_ISBN :
978-1-4244-2408-5
Electronic_ISBN :
978-1-4244-2409-2
DOI :
10.1109/TENCON.2008.4766689