Improved vertically integrated resonant tunneling diodes

Author

Park, B.G. ; Wolak, E. ; Lear, K.L. ; Harris, J.S., Jr.

Author_Institution

Dept. of Electr. Eng., Stanford Univ., CA, USA

fYear

1989

fDate

3-6 Dec. 1989

Firstpage

563

Lastpage

566

Abstract

A lumped-element circuit model is developed for vertically integrated resonant tunneling diodes (RTDs), assuming that the individual RTDs behave as independent circuit elements in vertically integrated RTDs. The limit of this model is determined and the transition between incoherent and coherent transport is observed by systematic variation of separation layer thickness between diodes. The limit of applicability of this model is determined to be devices with 500 AA separation for 10/sup 18/ cm/sup -3/ doping. High current density is identified as a critical parameter for high-speed operation, and a peak current density of 2.5*10/sup 4/ A/cm/sup 2/ was achieved with little degradation in the peak to valley ratio by using thin barriers. Approaches for further improvement are suggested.<>

Keywords

current density; equivalent circuits; resonant tunnelling devices; semiconductor device models; tunnel diodes; current density; high-speed operation; lumped-element circuit model; resonant tunneling diodes; separation layer thickness; vertically integrated RTDs; Capacitance; Current density; Degradation; Diodes; Gallium arsenide; Lattices; Nonlinear equations; RLC circuits; Resonant tunneling devices; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-0817-4

Type

conf

DOI

10.1109/IEDM.1989.74345

Filename

74345