DocumentCode :
2530311
Title :
A novel soi-mems “micro-swing” time-accelerometer operating in two time-based transduction modes for high sensitivity and extended range
Author :
Rajaraman, V. ; Hau, B.S. ; Rocha, L.A. ; Dias, Rosana Alves ; Makinwa, K.A.A. ; Dekker, R.
Author_Institution :
Dept. of Microelectron., Delft Univ. of Technol. (TU Delft), Delft, Netherlands
fYear :
2011
fDate :
5-9 June 2011
Firstpage :
2066
Lastpage :
2069
Abstract :
Here we report the design, modelling, fabrication and initial characterisation results of a new SOI-MEMS “micro-swing” time-accelerometer. Time-based acceleration sensing can be performed using either the embedded piezoresistors or the capacitive sense electrodes. The accelerometer can be operated in two distinct time-based transduction modes aimed at high sensitivity and extended operation range, depending on the applied drive voltage (α.VPull-In). A high sensitivity of 0.914μs/μg is achieved using the pull-in time metastable (PITMS) region (for, α = 1.01) over a small acceleration range from ±0.02g-±0.79g. Extended operation range up to ±2g can be achieved through mechanical time-of-flight (TOF) sensing (for, α ≥ 1.4). Preliminary measurements indicate device functionality and a pull-in transit time of 11ms for a tilt-acceleration corresponding to 70mg.
Keywords :
accelerometers; elemental semiconductors; microfabrication; microsensors; silicon; silicon-on-insulator; PITMS region; SOI-MEMS microswing time-accelerometer; Si; capacitive sense electrode; distinct time-based transduction mode; embedded piezoresistor; mechanical TOF sensing; mechanical time-of-flight sensing; pull-in time metastable region; pull-in transit time; tilt-acceleration; time 11 ms; time-based acceleration sensing; Damping; Electrodes; Epitaxial growth; Position measurement; Resonant frequency; Sensitivity; Springs; Micro-swing accelerometer; SOI-MEMS; capacitive sensing; electrostatic actuation/driving; epitaxial piezoresistor; inertial sensor; piezoresistive sensing; pull-in time; time accelerometer; time-of-flight; transit time;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems Conference (TRANSDUCERS), 2011 16th International
Conference_Location :
Beijing
ISSN :
Pending
Print_ISBN :
978-1-4577-0157-3
Type :
conf
DOI :
10.1109/TRANSDUCERS.2011.5969225
Filename :
5969225
Link To Document :
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