Hydrogen gas sensing performance of a Pt/graphene/SiC device

Author

Shafiei, M. ; Shin, K. ; Yu, J. ; Han, S.H. ; Jong, J.W. ; Motta, N. ; du Plessis, J. ; Wlodarski, W.

Author_Institution

Sensor Technol. Lab., RMIT Univ., Melbourne, VIC, Australia

fYear

2011

fDate

5-9 June 2011

Firstpage

170

Lastpage

173

Abstract

In this work, we present the development of a Pt/graphene/SiC device for hydrogen gas sensing. A single layer of graphene was deposited on 6H-SiC via chemical vapor deposition. The presence of graphene C-C bonds was observed via X-ray photoelectron spectroscopy analysis. Current-voltage characteristics of the device were measured at the presence of hydrogen at different temperatures, from 25°C to 170°C. The dynamic response of the device was recorded towards hydrogen gas at an optimum temperature of 130°C. A voltage shift of 191 mV was recorded towards 1% hydrogen at -1 mA constant current.

Keywords

X-ray photoelectron spectra; chemical vapour deposition; gas sensors; graphene; hydrogen; platinum; silicon compounds; wide band gap semiconductors; 6H-SiC substrate; C-C bonds; H₂; Pt-C-SiC; SiC; X-ray photoelectron spectroscopy analysis; chemical vapor deposition; current -1 mA; current-voltage characteristics; graphene; hydrogen gas sensing performance; temperature 25 degC to 170 degC; Films; Sensors; Silicon carbide; Substrates; Temperature; Temperature measurement; Chemical Vapor Deposition; Graphene; Hydrogen; Sensor;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors, Actuators and Microsystems Conference (TRANSDUCERS), 2011 16th International

Conference_Location

Beijing

ISSN

Pending

Print_ISBN

978-1-4577-0157-3

Type

conf

DOI

10.1109/TRANSDUCERS.2011.5969235

Filename

5969235