DocumentCode
2530593
Title
Large scale production of uniform GaInP/GaAs structures by low pressure MOVPE in a multiwafer planetary reactor [solar cell manufacture]
Author
Schmitz, P. ; Hergeth, J. ; Strauch, G. ; Juergensen, H.
fYear
1991
fDate
7-11 Oct 1991
Firstpage
471
Abstract
Using the results from theoretical calculations and a proven reactor technique, GaInP material was grown for optical solar cell applications on large substrate areas which had the uniformity required by highly developed devices. The data obtained from growing the GaInP material were then applied to the large planetary reactor cell and showed similar results in terms of single wafers, but with the added advantage of producing multiple clones of this one wafer at a time
Keywords
Epitaxial growth; Epitaxial layers; Gallium arsenide; Inductors; Large-scale systems; Optical materials; Photovoltaic cells; Planets; Production; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location
Las Vegas, NV
Print_ISBN
0-87942-636-5
Type
conf
DOI
10.1109/PVSC.1991.169260
Filename
169260
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