• DocumentCode
    2530593
  • Title

    Large scale production of uniform GaInP/GaAs structures by low pressure MOVPE in a multiwafer planetary reactor [solar cell manufacture]

  • Author

    Schmitz, P. ; Hergeth, J. ; Strauch, G. ; Juergensen, H.

  • fYear
    1991
  • fDate
    7-11 Oct 1991
  • Firstpage
    471
  • Abstract
    Using the results from theoretical calculations and a proven reactor technique, GaInP material was grown for optical solar cell applications on large substrate areas which had the uniformity required by highly developed devices. The data obtained from growing the GaInP material were then applied to the large planetary reactor cell and showed similar results in terms of single wafers, but with the added advantage of producing multiple clones of this one wafer at a time
  • Keywords
    Epitaxial growth; Epitaxial layers; Gallium arsenide; Inductors; Large-scale systems; Optical materials; Photovoltaic cells; Planets; Production; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
  • Conference_Location
    Las Vegas, NV
  • Print_ISBN
    0-87942-636-5
  • Type

    conf

  • DOI
    10.1109/PVSC.1991.169260
  • Filename
    169260