Enhanced performance of a CMOS interdigital capacitive humidity sensor by graphene oxide

Author

Zhao, Cheng-Long ; Qin, Ming ; Li, Wei-Hua ; Huang, Qing-An

Author_Institution

Key Lab. of MEMS of the Minist. of Educ., Southeast Univ., Nanjing, China

fYear

2011

fDate

5-9 June 2011

Firstpage

1954

Lastpage

1957

Abstract

This paper presents a CMOS interdigital capacitive humidity sensor based on graphene oxide, and the sensitivity of this humidity sensor was improved significantly by using graphene oxide as sensing material. The passivation between the Al electrodes and the sensing material was used to ensure the reliability of the capacitive-type humidity sensor. The experimental results show that, compared with the sensor using polyimide as sensing material, the sensitivity of the sensor based on graphene oxide is 23 times larger, and the response time of such a sensor is also improved greatly.

Keywords

CMOS integrated circuits; capacitive sensors; carbon compounds; graphene; humidity sensors; passivation; reliability; CMOS interdigital capacitive humidity sensor; CO; electrodes; reliability; sensing material; CMOS integrated circuits; Capacitance; Electrodes; Humidity; Polyimides; Sensors; Capacitive sensor; graphene oxide; humidity sensor; polyimide;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors, Actuators and Microsystems Conference (TRANSDUCERS), 2011 16th International

Conference_Location

Beijing

ISSN

Pending

Print_ISBN

978-1-4577-0157-3

Type

conf

DOI

10.1109/TRANSDUCERS.2011.5969243

Filename

5969243