DocumentCode
2530599
Title
ZnO thin film resonator lattice filters
Author
Mang, L. ; Hickernell, F.
Author_Institution
Gov. Syst. & Technol. Group, Motorola Inc., Scottsdale, AZ, USA
fYear
1996
fDate
5-7 Jun 1996
Firstpage
363
Lastpage
365
Abstract
ZnO thin film resonator lattice filter results at GHz frequencies are reported. These filters are very compact, measuring 1 mm by 1 mm, have balanced input and output, and have insertion loss of approximately 1.5 dB at 1.5 GHz, while selectivity is over 30 dB. The performance of these lattice filters compares very favorably with ladder filters processed on the same silicon wafer with identical figure of merit, Q/r, having approximately double the bandwidth of the ladder filters. These filters are best used with ICs with differential I/O which are becoming commercially available from semiconductor companies
Keywords
UHF filters; acoustic resonator filters; bulk acoustic wave devices; frequency response; lattice filters; microwave filters; passive filters; thin film devices; zinc compounds; 1.5 GHz; 1.5 dB; BAW filters; Si; ZnO thin film resonator; ZnO-Si; balanced input; balanced output; insertion loss; resonator lattice filters; Calibration; Frequency; Lattices; Microwave filters; Resonator filters; Semiconductor thin films; Silicon; Substrates; Transistors; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Frequency Control Symposium, 1996. 50th., Proceedings of the 1996 IEEE International.
Conference_Location
Honolulu, HI
Print_ISBN
0-7803-3309-8
Type
conf
DOI
10.1109/FREQ.1996.559880
Filename
559880
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