• DocumentCode
    2530599
  • Title

    ZnO thin film resonator lattice filters

  • Author

    Mang, L. ; Hickernell, F.

  • Author_Institution
    Gov. Syst. & Technol. Group, Motorola Inc., Scottsdale, AZ, USA
  • fYear
    1996
  • fDate
    5-7 Jun 1996
  • Firstpage
    363
  • Lastpage
    365
  • Abstract
    ZnO thin film resonator lattice filter results at GHz frequencies are reported. These filters are very compact, measuring 1 mm by 1 mm, have balanced input and output, and have insertion loss of approximately 1.5 dB at 1.5 GHz, while selectivity is over 30 dB. The performance of these lattice filters compares very favorably with ladder filters processed on the same silicon wafer with identical figure of merit, Q/r, having approximately double the bandwidth of the ladder filters. These filters are best used with ICs with differential I/O which are becoming commercially available from semiconductor companies
  • Keywords
    UHF filters; acoustic resonator filters; bulk acoustic wave devices; frequency response; lattice filters; microwave filters; passive filters; thin film devices; zinc compounds; 1.5 GHz; 1.5 dB; BAW filters; Si; ZnO thin film resonator; ZnO-Si; balanced input; balanced output; insertion loss; resonator lattice filters; Calibration; Frequency; Lattices; Microwave filters; Resonator filters; Semiconductor thin films; Silicon; Substrates; Transistors; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Frequency Control Symposium, 1996. 50th., Proceedings of the 1996 IEEE International.
  • Conference_Location
    Honolulu, HI
  • Print_ISBN
    0-7803-3309-8
  • Type

    conf

  • DOI
    10.1109/FREQ.1996.559880
  • Filename
    559880