DocumentCode
2530899
Title
A low-power ternary content addressable memory (TCAM) with segmented and non-segmented matchlines
Author
Sultan, M. ; Siddiqui, M. ; Sonika ; Visweswaran, G.S.
Author_Institution
Dept. of Electr. Eng., Indian Inst. of Technol., New Delhi
fYear
2008
fDate
19-21 Nov. 2008
Firstpage
1
Lastpage
5
Abstract
This paper presents a ternary content-addressable memory (TCAM) cell structure with low capacitance comparison logic and two techniques to reduce power consumption in TCAM. The first technique employs non-segmented match lines (MLs) to reduce match time during search operation and the second technique employs MLs segmentation to reduce power consumption during search operation in ternary content-addressable memories (TCAMs). The TCAM cell contribution to the match-line (ML) capacitance is reduced by 75% or 50% depending on the globally masked bit in search data by using low capacitance comparison logic TCAM cell as compared to the conventional nor-comparison logic TCAM cell. In MLs segmentation technique, the search operation is pipelined by breaking the match-lines into two segments. If the stored words are not matched with the search data in their first segment, then the searching operation is discontinued for the second segment, thus reducing power. In non-segmented MLs technique, the search operation is not pipelined and is carried out for complete data word in TCAM. We have employed these techniques in a 144 X 144-bit TCAM in 1.2 V, 0.13 mum CMOS technology (UMC), illustrating an overall power reduction of 60% in segmented MLs technique and overall match time reduction of 40% in non-segmented technique, compared to a conventional, non-segmented MLs architecture.
Keywords
CMOS integrated circuits; content-addressable storage; logic circuits; low-power electronics; CMOS technology; cell contribution; data word; logic TCAM cell; low capacitance comparison; low-power electronics; match-line capacitance; nonsegmented matchlines; power reduction; search data; search operation; size 0.13 mum; ternary content addressable memory; voltage 1.2 V; Associative memory; CADCAM; CMOS technology; Cams; Capacitance; Computer aided manufacturing; Energy consumption; Logic; Multilevel systems; Paper technology;
fLanguage
English
Publisher
ieee
Conference_Titel
TENCON 2008 - 2008 IEEE Region 10 Conference
Conference_Location
Hyderabad
Print_ISBN
978-1-4244-2408-5
Electronic_ISBN
978-1-4244-2409-2
Type
conf
DOI
10.1109/TENCON.2008.4766746
Filename
4766746
Link To Document