Title :
Possible benefits of moderate inversion for MOSFET transconductors
Author :
Langlois, P.J. ; Demosthenous, A.
Author_Institution :
Dept. of Electron. & Electr. Eng., Coll. Univ., London
Abstract :
The possible benefits of moderate inversion on harmonic distortion for MOSFETS in linear and squarer transconductors are examined. The application of the simple equation on which the EKV model is based provides analytic information on the minima in the harmonic distortion at certain bias points. The effect on harmonic distortion of increasing the input signal amplitude is also discussed. Theoretical and simulated results are compared
Keywords :
MOSFET; harmonic distortion; semiconductor device models; EKV model; MOSFET transconductors; harmonic distortion; input signal amplitude; linear transconductors; moderate inversion; squarer transconductors; CMOS technology; Differential equations; Educational institutions; Harmonic distortion; MOSFET circuits; Resistors; SPICE; Semiconductor device modeling; Threshold voltage; Transconductors;
Conference_Titel :
Circuits and Systems, 2006. ISCAS 2006. Proceedings. 2006 IEEE International Symposium on
Conference_Location :
Island of Kos
Print_ISBN :
0-7803-9389-9
DOI :
10.1109/ISCAS.2006.1692619
