DocumentCode :
2530985
Title :
Functionalization of nanoscaled 2 nm-thick ALD-HfO2 layer by rapid thermal annealing and CF4 plasma for LAPS NH4+ detection
Author :
Yang, Jung-Hsiang ; Lu, Tseng-Fu ; Wang, Jer-Chyi ; Pijanswska, Dorota G. ; Chin, Chi-Hang ; Lue, Cheng-En ; Yang, Chia-Ming ; Lai, Chao-Sung
Author_Institution :
Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan
fYear :
2011
fDate :
5-9 June 2011
Firstpage :
2118
Lastpage :
2121
Abstract :
In this work, discussing the detection of NH4+ ion based on LAPS with functionalized 2 nm-thick ALD-HfO2 film using RTA and CF4 plasma is demonstrated. The annealing treatment at 500, 700, and 900°C were performed on ALD-HfO2 film and the plasma treatment for 1, 3, and 5 min were performed on ALD-HfO2 film with 900°C annealing. In the results, the response for NH4+ ion detection was decreased with increasing annealing temperature and increased with increasing plasma time. The optimum sensitivity of 37.28mV/pNH4 was achieved with 900°C annealing and 5 min CF4 plasma.
Keywords :
ammonia; atomic layer deposition; chemical sensors; hafnium compounds; organic compounds; plasma materials processing; rapid thermal annealing; HfO2; LAPS detection; NH4+; atomic layer deposition; ion detection; light addressable potentiometric sensor; plasma treatment; rapid thermal annealing treatment; size 2 nm; temperature 500 degC; temperature 700 degC; temperature 900 degC; time 1 min; time 3 min; time 5 min; Annealing; Interference; Linearity; Plasmas; Sensitivity; Sensors; Surface treatment; ammonium ion (NH4+); and carbon tetrafluoride (CF4) plasma; light addressable potentiometric sensor (LAPS); rapid thermal annealing (RTA);
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems Conference (TRANSDUCERS), 2011 16th International
Conference_Location :
Beijing
ISSN :
Pending
Print_ISBN :
978-1-4577-0157-3
Type :
conf
DOI :
10.1109/TRANSDUCERS.2011.5969270
Filename :
5969270
Link To Document :
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