Effective channel mobility and series resistance extraction for fresh and hot-carrier stressed graded junction MOSFETs using a single device

Author

Lou, C.L. ; Tan, C.B. ; Chim, W.K. ; Chan, D.S.H.

Author_Institution

Fac. of Eng., Nat. Univ. of Singapore, Singapore

fYear

1997

fDate

21-25 Jul 1997

Firstpage

140

Lastpage

145

Abstract

We present a new measurement technique-the drain current-conductance method (DCCM) to extract the gate-bias dependent effective channel mobility (μ_eff) and series resistances (R_s and R_d) of drain-engineered MOSFETs. Experimental verification for devices with differing channel lengths and after hot-carrier stresses showed that this technique is accurate and effective. The parameters extracted has provided further insight into the asymmetries of graded junctions, and the damage mechanisms of hot-carrier degraded MOSFETs

Keywords

MOSFET; carrier mobility; electric resistance; hot carriers; semiconductor device models; semiconductor device testing; damage mechanisms; drain current-conductance method; drain-engineered MOSFETs; effective channel mobility extraction; gate-bias dependent mobility; graded junction MOSFETs; hot-carrier degraded MOSFETs; hot-carrier stressed MOSFETs; measurement technique; series resistance extraction; Current measurement; Degradation; Differential equations; Failure analysis; Hot carrier effects; Hot carriers; Integrated circuit reliability; MOSFETs; Reliability engineering; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical & Failure Analysis of Integrated Circuits, 1997., Proceedings of the 1997 6th International Symposium on

Print_ISBN

0-7803-3985-1

Type

conf

DOI

10.1109/IPFA.1997.638177

Filename

638177