A versatile stacked storage capacitor on FLOTOX cell for megabit NVRAM applications

Author

Yamauchi, Y. ; Ishihara, H. ; Tanaka, K. ; Sakiyama, Kazuo ; Miyake, R.

Author_Institution

Sharp Corp., Nara, Japan

fYear

1989

fDate

3-6 Dec. 1989

Firstpage

595

Lastpage

598

Abstract

A versatile stacked storage capacitor on FLOTOX (SCF) cell is proposed for full featured megabit nonvolatile DRAMs (dynamic RAMs). The SCF cell structure achieves a cell area of 35.02 mu m/sup 2/ with 0.8- mu m features and permits an innovative flash store/recall (DRAM to EEPROM/EEPROM to DRAM) operation that does not disturb the original data in DRAM or EEPROM. This store operation is completed in less than 10 ms and store endurance for a single cell is greater than 10/sup 6/ cycles. In addition, data retention time sufficient for megabit DRAMs (greater than 10 s at RT) is obtained by use of a stacked capacitor structure.<>

Keywords

DRAM chips; EPROM; MOS integrated circuits; integrated memory circuits; 0.8 micron; 10 ms; 10 s; EEPROM; FLOTOX cell; data retention time; dynamic RAMs; flash store/recall operation; megabit NVRAM applications; nonvolatile DRAMs; stacked storage capacitor; store endurance; Capacitors; Character generation; Dielectrics; EPROM; Grounding; Nonvolatile memory; Random access memory; Read-write memory; Roentgenium; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-0817-4

Type

conf

DOI

10.1109/IEDM.1989.74351

Filename

74351