Conduction characteristics of ZnO-additive segregation structure

Author

Liu, Ziyu

Author_Institution

Dept. of Electr. Eng., Xi´an Jiaotong Univ.

fYear

1988

fDate

5-8 Jun 1988

Firstpage

276

Lastpage

278

Abstract

The conduction of a bilayer sample consisting of a ZnO layer and an additive segregation layer was investigated. It was found that (1) the DC V-I characteristics of the sample behave like those of nonohmic ZnO ceramics and can be adjusted by changing the resistance of the ZnO layer. Ceramics with large nonlinearity can be obtained by changing the resistance of the AnO grains

Keywords

II-VI semiconductors; ceramics; electrical conductivity of crystalline semiconductors and insulators; grain boundaries; semiconductor junctions; zinc compounds; DC V-I characteristics; ZnO; additive segregation layer; bilayer sample; nonlinearity; resistance; Ceramics; Current measurement; Electric variables measurement; Electrical resistance measurement; Electrodes; Electrons; Sandwich structures; Thickness measurement; Time measurement; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Insulation, 1988., Conference Record of the 1988 IEEE International Symposium on

Conference_Location

Cambridge, MA

ISSN

1089-084X

Type

conf

DOI

10.1109/ELINSL.1988.13922

Filename

13922

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2531029