Title :
Conduction characteristics of ZnO-additive segregation structure
Author_Institution :
Dept. of Electr. Eng., Xi´an Jiaotong Univ.
Abstract :
The conduction of a bilayer sample consisting of a ZnO layer and an additive segregation layer was investigated. It was found that (1) the DC V-I characteristics of the sample behave like those of nonohmic ZnO ceramics and can be adjusted by changing the resistance of the ZnO layer. Ceramics with large nonlinearity can be obtained by changing the resistance of the AnO grains
Keywords :
II-VI semiconductors; ceramics; electrical conductivity of crystalline semiconductors and insulators; grain boundaries; semiconductor junctions; zinc compounds; DC V-I characteristics; ZnO; additive segregation layer; bilayer sample; nonlinearity; resistance; Ceramics; Current measurement; Electric variables measurement; Electrical resistance measurement; Electrodes; Electrons; Sandwich structures; Thickness measurement; Time measurement; Zinc oxide;
Conference_Titel :
Electrical Insulation, 1988., Conference Record of the 1988 IEEE International Symposium on
Conference_Location :
Cambridge, MA
DOI :
10.1109/ELINSL.1988.13922
