Analysis and design considerations for very high frequency self-oscillating electronic ballasts

In this paper a consideration to design and improve the performance of high frequency self-oscillating electronic ballasts is presented. The proposed method is based on the describing function method and allows minimizing the parasitic elements effects presented above 200 kHz by considering the gate-source parasitic capacitance of power Mosfets and the switching delay times. Its main advantage is a better operating frequency approximation and hence a better performance of the ballast. Experimental results of the proposed method are compared against a conventional method in a frequency range of 200 kHz to 2 MHz, showing the feasibility of the proposed method.