DocumentCode :
2531240
Title :
Electrolytic charge inversion at programmable CMOS sensor interfaces
Author :
Jayant, Krishna ; Hartman, Mark R. ; Phelps, Joshua B. ; Gordon, Philip H. ; Luo, Dan ; Pollack, Lois ; Kan, Edwin C.
Author_Institution :
Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA
fYear :
2011
fDate :
5-9 June 2011
Firstpage :
2098
Lastpage :
2101
Abstract :
Electrochemical interface layer overcharging is experimentally demonstrated at planar MOS sensor interfaces by controlling the surface charge through nonvolatile charge injection. The electric field across the solid-fluid interface is modulated upon floating-gate program/erase and leads to electrolytic charge reversal, for which an analytical model is derived. This electrofluidic gating effect is further used to repel adsorbed DNA, realizing an electrical surface refreshable biosensor. Quasi-static and impedimetric measurements are presented for validation.
Keywords :
CMOS integrated circuits; charge injection; electrolysis; sensors; DNA; electric field; electrical surface refreshable biosensor; electrochemical interface layer overcharging; electrofluidic gating effect; electrolytic charge inversion; electrolytic charge reversal; floating-gate program-erase; impedimetric measurements; nonvolatile charge injection; planar MOS sensor interfaces; programmable CMOS sensor interfaces; quasi-static measurements; solid-fluid interface; Capacitance; DNA; Electric potential; Electrodes; Logic gates; Sensors; Surface impedance; CMOS; Charge inversion; double layer; floating gate;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems Conference (TRANSDUCERS), 2011 16th International
Conference_Location :
Beijing
ISSN :
Pending
Print_ISBN :
978-1-4577-0157-3
Type :
conf
DOI :
10.1109/TRANSDUCERS.2011.5969286
Filename :
5969286
Link To Document :
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