DocumentCode :
2531271
Title :
On the role of the interface with the substrate in the destructive dielectric breakdown of very thin insulating films grown on silicon
Author :
Novkovski, Nenad
Author_Institution :
Phys. Dept., Fac. of Sci., Skopje, Macedonia
fYear :
1998
fDate :
22-25 Jun 1998
Firstpage :
520
Lastpage :
523
Abstract :
In this paper we treat the connection between the insulator-silicon interface properties and the breakdown. Previously, we showed that there exists striking correlation between the generation of interface traps during the high-field stress and the charge to breakdown in a variety of oxynitride films prepared by RTP. Here we elaborate this question in more detail. This correlation being much stronger that the correlation of the breakdown with the field variations induced with charge trapping, indicates that the degradation leading to the breakdown is most probably insulator-silicon interface degradation itself rather then a direct field induced mechanism or hole trapping at the cathode of injection
Keywords :
electric breakdown; elemental semiconductors; insulating thin films; semiconductor-insulator boundaries; silicon; RTP; Si-SiON; charge to breakdown; dielectric breakdown; high field stress; hole trapping; insulating film; interface traps; oxynitride film; silicon substrate; Capacitors; Degradation; Dielectric breakdown; Dielectric measurements; Dielectric substrates; Dielectric thin films; Dielectrics and electrical insulation; Electric breakdown; Fabrication; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Conduction and Breakdown in Solid Dielectrics, 1998. ICSD '98. Proceedings of the 1998 IEEE 6th International Conference on
Conference_Location :
Vasteras
Print_ISBN :
0-7803-4237-2
Type :
conf
DOI :
10.1109/ICSD.1998.709338
Filename :
709338
Link To Document :
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