Title :
Direct-current measurements of interface traps and oxide charges in LDD pMOSFETs with an n-well structure
Author :
Jie, B.B. ; Li, M.-F. ; Lou, C.L. ; Lo, K.F. ; Chim, W.K. ; Chan, D.S.H.
Author_Institution :
Centre for IC Failure Anal. & Reliability, Nat. Univ. of Singapore, Singapore
Abstract :
A direct-current current-voltage (DCIV) technique for the measurement of interface traps and oxide charges in LDD pMOSFETs with n-well in p-substrate is demonstrated. The interface trap densities are monitored using the bulk current of the MOS transistor. The DCIV results for pMOSFETs after substrate hot carrier injection and channel hot carrier injection are presented and analyzed. There are two peaks in the DCIV spectrum after channel hot carrier injection, corresponding to hot-carrier-generated interface traps located in the channel region and the lightly-doped drain (LDD) region respectively. The stress-induced oxide charge results in the shifts of two peaks
Keywords :
MOSFET; electron traps; hot carriers; semiconductor device reliability; LDD pMOSFETs; bulk current; channel hot carrier injection; channel region; direct-current current-voltage technique; direct-current measurements; hot-carrier-generated interface traps; interface trap densities; interface traps; n-well in p-substrate; n-well structure; stress-induced oxide charge; substrate hot carrier injection; Current measurement; Degradation; Electron traps; Failure analysis; Hot carrier injection; Hot carriers; MOSFETs; Radiative recombination; Semiconductor device manufacture; Voltage;
Conference_Titel :
Physical & Failure Analysis of Integrated Circuits, 1997., Proceedings of the 1997 6th International Symposium on
Print_ISBN :
0-7803-3985-1
DOI :
10.1109/IPFA.1997.638193
