Analysis of GaAs HBT failure mechanisms: impact on life test strategy

Author

Maneux, C. ; Labat, N. ; Saysset, N. ; Touboul, A. ; Danto, Y. ; Dumas, J.-M. ; Launay, P. ; Dangla, J.

Author_Institution

Bordeaux I Univ., Gradignan, France

fYear

1997

fDate

21-25 Jul 1997

Firstpage

182

Lastpage

186

Abstract

A field-induced degradation mechanism responsible for the surface current drift in GaAs HBT is identified on the basis of accelerated ageing tests under bias. Degradations of ohmic contact and metallisation are highlighted under high temperature storage. These results bring further evidence of both bias and temperature-induced degradation mechanisms in GaAs HBTs. As a consequence, a specific life test strategy similar to that implemented for FETs has been derived

Keywords

III-V semiconductors; ageing; failure analysis; gallium arsenide; heterojunction bipolar transistors; life testing; ohmic contacts; semiconductor device metallisation; semiconductor device testing; GaAs; HBT; accelerated ageing tests; failure mechanisms; field-induced degradation mechanism; high temperature storage; life test strategy; metallisation; ohmic contact; surface current drift; temperature-induced degradation mechanisms; Accelerated aging; Degradation; Failure analysis; Gallium arsenide; Heterojunction bipolar transistors; Life estimation; Life testing; Metallization; Ohmic contacts; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical & Failure Analysis of Integrated Circuits, 1997., Proceedings of the 1997 6th International Symposium on

Print_ISBN

0-7803-3985-1

Type

conf

DOI

10.1109/IPFA.1997.638194

Filename

638194