Title :
Analysis of GaAs HBT failure mechanisms: impact on life test strategy
Author :
Maneux, C. ; Labat, N. ; Saysset, N. ; Touboul, A. ; Danto, Y. ; Dumas, J.-M. ; Launay, P. ; Dangla, J.
Author_Institution :
Bordeaux I Univ., Gradignan, France
Abstract :
A field-induced degradation mechanism responsible for the surface current drift in GaAs HBT is identified on the basis of accelerated ageing tests under bias. Degradations of ohmic contact and metallisation are highlighted under high temperature storage. These results bring further evidence of both bias and temperature-induced degradation mechanisms in GaAs HBTs. As a consequence, a specific life test strategy similar to that implemented for FETs has been derived
Keywords :
III-V semiconductors; ageing; failure analysis; gallium arsenide; heterojunction bipolar transistors; life testing; ohmic contacts; semiconductor device metallisation; semiconductor device testing; GaAs; HBT; accelerated ageing tests; failure mechanisms; field-induced degradation mechanism; high temperature storage; life test strategy; metallisation; ohmic contact; surface current drift; temperature-induced degradation mechanisms; Accelerated aging; Degradation; Failure analysis; Gallium arsenide; Heterojunction bipolar transistors; Life estimation; Life testing; Metallization; Ohmic contacts; Temperature;
Conference_Titel :
Physical & Failure Analysis of Integrated Circuits, 1997., Proceedings of the 1997 6th International Symposium on
Print_ISBN :
0-7803-3985-1
DOI :
10.1109/IPFA.1997.638194
