Title :
Dislocation multiplication inside contact holes
Author :
Hsieh, Yong-Fen ; Hwang, Yang-Chu ; Fu, Jui-Mei ; Peng, Yuan-Ching ; Chen, Lih-Juann
Author_Institution :
United Microelectron. Corp., Hsinchu, Taiwan
Abstract :
Ion implantation into contact holes has been widely used to dope the specific contact area and to reduce the contact resistance. In this study, mask edge defects were observed at the edge area of small contact holes (<0.5 um) with high aspect ratio (a/c>4), which resulted in multiplied dislocations penetrating into Si substrate for more than 0.3 um after back-end processings. Those dislocations were identified to be Schockley partials dislocations and stair rod dislocations lying on 4 sets of inclined (111)Si planes
Keywords :
contact resistance; dislocation multiplication; ion implantation; masks; metallisation; 0.5 micron; Schockley partial dislocation; Si; Si substrate; aspect ratio; back-end processing; contact hole; contact resistance; dislocation multiplication; ion implantation doping; mask edge defect; stair rod dislocation; Amorphous materials; Contact resistance; Crystallization; Degradation; Implants; Ion implantation; Materials science and technology; Microelectronics; Rapid thermal annealing; Surfaces;
Conference_Titel :
Physical & Failure Analysis of Integrated Circuits, 1997., Proceedings of the 1997 6th International Symposium on
Print_ISBN :
0-7803-3985-1
DOI :
10.1109/IPFA.1997.638203
