Title :
Spin polarized transport effects in III-V semiconductor heterostructures
Author_Institution :
THALES Res. & Technol., Paris XI Univ., Orsay, France
Abstract :
Summary form only given. In the field of spintronics, GaMnAs, a ferromagnetic semiconductor, offers many advantages to study tunnel magnetotransport properties when used as an electrode. The complexity of the transport mechanisms associated with spin orbit coupled states make this material a powerful means for finding novel effects; also it provides new challenges for a theoretical understanding. This includes the tunnel magnetoresistance (TMR) across single or double barriers, tunneling anisotropic magnetoresistance (TAMR) and current induced magnetic switching (CIMS), as recently reported in such systems. I will discuss on the basis of magnetoresistance experiments with tunnel junctions the key elements to observe and understand such effects.
Keywords :
III-V semiconductors; ferromagnetic materials; gallium arsenide; galvanomagnetic effects; magnetic semiconductors; magnetic switching; magnetoelectronics; manganese compounds; semiconductor heterojunctions; spin polarised transport; tunnelling magnetoresistance; GaMnAs; III-V semiconductor heterostructures; current induced magnetic switching; double barriers; electrodes; ferromagnetic semiconductor; magnetoresistance experiments; single barriers; spin orbit coupled states; spin polarized transport effects; spintronics; transport mechanisms; tunnel junctions; tunnel magnetotransport properties; tunneling anisotropic magnetoresistance; Anisotropic magnetoresistance; Electrodes; III-V semiconductor materials; Magnetic anisotropy; Magnetic properties; Magnetic semiconductors; Magnetoelectronics; Perpendicular magnetic anisotropy; Spin polarized transport; Tunneling magnetoresistance;
Conference_Titel :
MEMS, NANO and Smart Systems, 2005. Proceedings. 2005 International Conference on
Print_ISBN :
0-7695-2398-6
DOI :
10.1109/ICMENS.2005.109