Title :
Simulation of carbon nanotube field-effect devices
Author :
Latessa, Luca ; Pecchia, Alessandro ; Di Carlo, Aldo ; Scarpa, Giuseppe ; Lugli, Paolo
Author_Institution :
Dept. of Electron. Eng., Univ. of Rome ´´Tor Vergata´´, Italy
Abstract :
Ab initio quantum mechanical numerical simulations have been used to study electronic transport in nanoscale electronic devices. We have developed a new code based on self-consistent density-functional tight-binding (DFTB) method and non-equilibrium Green´s function (NEGF) formalism. Using this approach, we investigate the coherent transport properties of a long semiconducting CNT when the source-drain current is modulated by a coaxial gate. Exact boundary conditions for the electrostatic potential in the coaxial gate geometry are taken into account solving in real space a 3D Poisson equation. Results stress the importance of a good electrostatic-design of the gate contact to obtain the same field-effect modulation we have in conventional planar MOSFET.
Keywords :
Green´s function methods; MOSFET; Poisson equation; ab initio calculations; carbon nanotubes; density functional theory; nanotube devices; semiconductor device models; semiconductor materials; tight-binding calculations; 3D Poisson equation; C; ab initio quantum mechanical numerical simulations; carbon nanotube field-effect devices; coaxial gate geometry; coherent transport properties; electronic transport; electrostatic potential; field-effect modulation; gate contact; nanoscale electronic devices; nonequilibrium Green function formalism; self-consistent density-functional tight-binding method; semiconducting carbon nanotube; source-drain current; Boundary conditions; Carbon nanotubes; Coaxial components; Electrostatics; Geometry; Green´s function methods; Nanoscale devices; Numerical simulation; Quantum mechanics; Semiconductivity;
Conference_Titel :
Nanotechnology, 2004. 4th IEEE Conference on
Print_ISBN :
0-7803-8536-5
DOI :
10.1109/NANO.2004.1392232
