Analytical Modeling of the Surface Potential of Triple Material Symmetrical Gate Stack Double Gate (TMGS-DG) MOSFET

Author

Singh, Navab ; Tripathi, Shivendra

Author_Institution

Dept. of Electron. & Commun. Eng, Motilal Nehru Nat. Inst. of Technol., Allahabad, India

fYear

2014

fDate

9-11 May 2014

Firstpage

1

Lastpage

3

Abstract

This paper presents two dimensional (2D) analytical Modeling of the Surface Potential of Triple Material Symmetric Gate Stack Double Gate (TMGS-DG) MOSFET. The model has been derived by solving 2D Poisson´s equation in conjunction with suitable boundary conditions. The effect of high-k layer thickness on the potential barrier has been analyzed. The results obtained from the developed model have been compared with the numerical simulation results obtained using ATLAS™ device simulator.

Keywords

MOSFET; Poisson equation; semiconductor device models; surface potential; 2D Poisson equation; 2D analytical modeling; ATLAS™ device simulator; TMGS-DG MOSFET; high-k layer thickness; surface potential; triple material symmetrical gate stack double gate MOSFET; Logic gates; MOSFET circuits; Nanotechnology; Semiconductor device modeling; Silicon; Double gate MOSFET; gate Engineering; parabolic approximation method;

fLanguage

English

Publisher

ieee

Conference_Titel

Recent Advances and Innovations in Engineering (ICRAIE), 2014

Conference_Location

Jaipur

Print_ISBN

978-1-4799-4041-7

Type

conf

DOI

10.1109/ICRAIE.2014.6909215

Filename

6909215