DocumentCode :
2531670
Title :
Investigation for lateral diecrack on SIP power device
Author :
Premachandran, C.S. ; Palmeda, Elvira M. ; Chai, T.C.
Author_Institution :
Delco Electron., Singapore
fYear :
1997
fDate :
21-25 Jul 1997
Firstpage :
219
Lastpage :
223
Abstract :
SIP packages were found to be susceptible to lateral die crack during assembly process. An investigation into the lateral die crack has led to better understanding of the possible failure mechanism and solutions for improvement have been found. In this study both experimental and FEA simulation were carried out. The simulated results can correlate well with experimental observation. Based on this work the design methodology for the SIP package have been improved. It is possible to build SIP packages with better resistant to lateral die crack and hence further enhance its quality and reliability
Keywords :
assembling; cracks; failure analysis; finite element analysis; integrated circuit packaging; power integrated circuits; FEA simulation; SIP package; assembly; design methodology; failure; lateral die crack; power device; reliability; Assembly; Delamination; Electric shock; Failure analysis; Materials testing; Packaging; Performance analysis; Scanning electron microscopy; Silicon; Stress;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physical & Failure Analysis of Integrated Circuits, 1997., Proceedings of the 1997 6th International Symposium on
Print_ISBN :
0-7803-3985-1
Type :
conf
DOI :
10.1109/IPFA.1997.638211
Filename :
638211
Link To Document :
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