DocumentCode
2531861
Title
A nanowatt bandgap voltage reference for ultra-low power applications
Author
Miller, Scott ; MacEachern, Leonard
Author_Institution
Dept. of Electron., Carleton Univ., Ottawa, Ont.
fYear
2006
fDate
21-24 May 2006
Lastpage
648
Abstract
A low voltage low power voltage reference for biomedical and embedded applications is proposed. The reference voltage has been designed in a mixed-signal 0.13 mum CMOS process for source voltages as low as 0.5 V. The reference makes use of MOSFETs in the weak inversion region to consume nanowatts of power. Monte Carlo simulations show an average temperature coefficient of 2.2ppm/degC from -40 degC to 100 degC. The circuit layout occupies approximately 25mum times 10 mum and draws 80 nA from a 500 mV supply
Keywords
CMOS integrated circuits; MOSFET circuits; Monte Carlo methods; integrated circuit design; low-power electronics; mixed analogue-digital integrated circuits; reference circuits; -40 to 100 C; 0.13 micron; 500 mV; 80 nA; MOSFET; Monte Carlo simulations; mixed-signal CMOS; ultra-low power applications; voltage reference; weak inversion region; CMOS process; Circuits; Degradation; Diodes; Equations; Fluctuations; Low voltage; MOSFETs; Photonic band gap; Temperature dependence;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2006. ISCAS 2006. Proceedings. 2006 IEEE International Symposium on
Conference_Location
Island of Kos
Print_ISBN
0-7803-9389-9
Type
conf
DOI
10.1109/ISCAS.2006.1692668
Filename
1692668
Link To Document