Title :
Triple high κ stacks (Al2O3/HfO2/Al2O3) with high pressure (10 atm) H2 and D2 annealing for SONOS type flash memory device applications
Author :
Jeon, Sanghun ; Choi, Sangmoo ; Park, Yoondong ; Hwang, Hyunsang ; Han, Jung Hee ; Chae, Hisun ; Chae, Soo Doo ; Kim, Ju Hyung ; Kim, Moon Kyung ; Jeong, Youn Seok ; Yoondong Park ; Seo, Sunare ; Lee, Jo Won ; Kim, Chung Woo
Author_Institution :
M.D. Lab., Samsung Adv. Inst. of Technol., Kyungki, South Korea
Abstract :
In this article, we report on electrical and memory properties of triple high-κ stacks (Al2O3/HfO2/Al2O3) with high pressure (10 atm) H2 and D2 annealing for SONOS type flash memory device applications. For 3 nm-thick Al2O3/10 nm-thick HfO2/10 nm-thick Al2O3 (AHA) stack, memory window (M.W.) of 1.4 V at programming/erasing (P/E) condition of ±6 V/1-2 msec was obtained. In addition, high pressure D2 annealed sample shows improved retention characteristics such as large memory window, and low slope per decade with retention time.
Keywords :
alumina; annealing; flash memories; hafnium compounds; permittivity; 1.4 V; 10 atm; 10 nm; 3 nm; Al2O3-HfO2-Al2O3; flash memory device applications; high pressure D2 annealing; high pressure H2 annealing; memory window; programming-erasing condition; retention time; slope per decade; triple high-κ stacks; Annealing; Artificial intelligence; Flash memory; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Hydrogen; Materials science and technology; SONOS devices; Voltage;
Conference_Titel :
Nanotechnology, 2004. 4th IEEE Conference on
Print_ISBN :
0-7803-8536-5
DOI :
10.1109/NANO.2004.1392247
