Title :
Identification of process defects using back side emission microscopy
Author :
Liu, Chun-Sheng ; Peng, Charng-E ; Hsu, Chen-Chung
Author_Institution :
United Microelectron. Corp., Hsin-Chu, Taiwan
Abstract :
As the CMOS is scaling down quickly, the accurate and precise diagnosis of the process failure mechanisms in the ULSI circuits becomes more difficult and time consuming. In this paper, a new failure analysis technique for ULSI process defects using the back side emission microscopy is proposed. The real location of the defect site under the metal layer can be detected exactly by this new technique
Keywords :
CMOS integrated circuits; ULSI; electron microscopy; failure analysis; field emission electron microscopy; integrated circuit technology; CMOS IC; ULSI circuit; back side emission microscopy; diagnosis; failure analysis; metal layer; process defects; CMOS process; Circuits; Cities and towns; Failure analysis; Leak detection; Microelectronics; Microscopy; Testing; Ultra large scale integration; Voltage;
Conference_Titel :
Physical & Failure Analysis of Integrated Circuits, 1997., Proceedings of the 1997 6th International Symposium on
Print_ISBN :
0-7803-3985-1
DOI :
10.1109/IPFA.1997.638219
