Scanning tunneling microscopy using dynamic laser heating

Author

Ballard, Joshua ; Shi, Dongxia ; Carmichael, Erin ; Pappu, Sravan ; Lyding, Joe ; Gruebele, Martin

Author_Institution

Beckman Inst. of Adv. Sci. & Technol., Illinois Univ., Urbana, IL, USA

fYear

2004

fDate

16-19 Aug. 2004

Firstpage

68

Lastpage

70

Abstract

A hydrogen passivated Si(100)-2×1 surface is studied using ultrafast laser excitation with a novel total internal reflection geometry. The incoherent tip and sample heating dynamics are studied, and it is shown that as long as the STM feedback is faster than the heating and cooling processes, atomic scale imaging can be achieved, even in the presence of significant tip and sample expansion and contraction. This opens the door for studies of surface processes on the ultrafast timescale.

Keywords

elemental semiconductors; high-speed optical techniques; hydrogen; laser beam effects; laser materials processing; passivation; scanning tunnelling microscopy; silicon; STM; Si; atomic scale imaging; cooling process; dynamic laser heating; heating dynamics; hydrogen passivation; scanning tunneling microscopy; surface process; total internal reflection geometry; ultrafast laser excitation; Cooling; Geometrical optics; Heating; Hydrogen; Laser excitation; Laser feedback; Microscopy; Optical reflection; Surface emitting lasers; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2004. 4th IEEE Conference on

Print_ISBN

0-7803-8536-5

Type

conf

DOI

10.1109/NANO.2004.1392252

Filename

1392252