A novel voltage-controlled grounded resistor using FGMOS technique

Author

Pandey, Rishikesh ; Gupta, Maneesha

Author_Institution

Electron. & Commun. Eng. Dept., Netaji Subhas Inst. of Technol., New Delhi, India

fYear

2009

fDate

14-16 March 2009

Firstpage

16

Lastpage

19

Abstract

This paper proposes a novel floating gate MOSFET (FGMOS) based voltage-controlled grounded resistor (VCGR). The FGMOS is used to cancel the nonlinearity term present in the drain current equation of MOSFET operating in ohmic region. The implementation of n^th order tunable high-pass filter using the proposed VCGR is also suggested. The proposed VCGR is simple, compact, accurate, and with low power dissipation of 2.61 muW. The circuits are simulated using SPICE for 0.5 mum CMOS technology to demonstrate the effectiveness of the circuits.

Keywords

CMOS integrated circuits; MOSFET; SPICE; high-pass filters; low-power electronics; resistors; CMOS technology; SPICE; floating gate MOSFET; n^th order tunable high-pass filter; ohmic region; power 2.61 muW; size 0.5 mum; voltage-controlled grounded resistor; CMOS technology; Circuit simulation; Filters; MOSFET circuits; Nonlinear equations; Power dissipation; Resistors; SPICE; Tunable circuits and devices; Voltage; Floating gate MOSFETs; high-pass filter; voltage-controlled grounded resistor;

fLanguage

English

Publisher

ieee

Conference_Titel

Multimedia, Signal Processing and Communication Technologies, 2009. IMPACT '09. International

Conference_Location

Aligarh

Print_ISBN

978-1-4244-3602-6

Electronic_ISBN

978-1-4244-3604-0

Type

conf

DOI

10.1109/MSPCT.2009.5164163

Filename

5164163