DocumentCode :
2532146
Title :
InP-based photodetector bonded on CMOS with Si3N4 interconnect waveguides
Author :
Binetti, P.R.A. ; Leijtens, X.J.M. ; Ripoll, A. Morant ; de Vries, T. ; Smalbrugge, E. ; Oei, Y.S. ; Di Cioccio, L. ; Fedeli, J.M. ; Lagahe, C. ; Orobtchouk, R. ; Van Thourhout, D. ; van Veldhoven, P.J. ; Nötzel, R. ; Smit, M.K.
Author_Institution :
COBRA Res. Inst., Tech. Univ. Eindhoven, Eindhoven, Netherlands
fYear :
2009
fDate :
4-8 Oct. 2009
Firstpage :
139
Lastpage :
140
Abstract :
We developed an InP-based photodetector which was bonded on a CMOS wafer containing a Si3N4-wiring photonic circuit. The detector fabrication is compatible with wafer scale processing steps, guaranteeing compatibility towards future generation electronic IC processing. Integration technology and experimental results are presented in this paper.
Keywords :
CMOS integrated circuits; integrated circuit interconnections; photodetectors; waveguides; CMOS wafer; InP; Si3N4; integration technology; interconnect waveguides; photodetector; photonic circuit; wafer scale processing; wiring; Absorption; Indium phosphide; Integrated circuit interconnections; Optical buffering; Optical device fabrication; Optical interconnections; Optical waveguides; Photodetectors; Photonic integrated circuits; Wafer bonding;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
LEOS Annual Meeting Conference Proceedings, 2009. LEOS '09. IEEE
Conference_Location :
Belek-Antalya
ISSN :
1092-8081
Print_ISBN :
978-1-4244-3680-4
Electronic_ISBN :
1092-8081
Type :
conf
DOI :
10.1109/LEOS.2009.5343085
Filename :
5343085
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2532146
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