Title :
Strong bandwidth-enhancement effect in high-speed GaAs/AlGaAs based uni-traveling carrier photodiode under small photocurrent and zero-bias operation
Author :
Kuo, F.-M. ; Hsu, T.-C. ; Shi, J.-W.
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chungli, Taiwan
Abstract :
Strong bandwidth-enhancement has been observed in GaAs/AlGaAs UTC-PD under small-output-photocurrent (0.4 mA) and zero-bias operation. Equivalent-circuit-modeling results indicate that such effect is due to self-induced-field inside absorption layer, which benefits devices´ high-speed performance under zero-power-consumption operation.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; photoconductivity; photodiodes; photoemission; GaAs-AlGaAs; bandwidth-enhancement effect; current 0.4 mA; equivalent-circuit-modeling; photocurrent; self-induced-field inside absorption layer; uni-traveling carrier photodiode; zero-bias operation; Absorption; Bandwidth; Circuits; Frequency measurement; Gallium arsenide; High speed optical techniques; Optical interconnections; Photoconductivity; Photodiodes; Region 2;
Conference_Titel :
LEOS Annual Meeting Conference Proceedings, 2009. LEOS '09. IEEE
Conference_Location :
Belek-Antalya
Print_ISBN :
978-1-4244-3680-4
Electronic_ISBN :
1092-8081
DOI :
10.1109/LEOS.2009.5343086
