Title :
Ballistic transport in strained-Si cavities: experiment and theory
Author :
Scappucci, G. ; Di Gaspare, L. ; Notargiacomo, A. ; Evangelisti, F. ; Giovine, E. ; Leoni, R. ; Piazza, V. ; Pingue, P. ; Beltram, F. ; Pala, M.G. ; Curatola, G. ; Iannaccone, G.
Author_Institution :
Dipt. di Fisica, Univ. Roma Tre, Rome, Italy
Abstract :
In this paper, we present the observation of ballistic transport in strained silicon cavities defined by etching on a silicon germanium heterostructure, demonstrated by magnetic focusing of conductance of the cavity at T=50 mK. Numerical simulations, based on a novel approach which allows to include an arbitrary degree of decoherence in mesoscopic transport, show that magnetoconductance features can be related to the semiclassical orbits by means of the local density of states in the cavity.
Keywords :
Ge-Si alloys; ballistic transport; electronic density of states; elemental semiconductors; etching; magnetoresistance; mesoscopic systems; numerical analysis; semiconductor heterojunctions; semiconductor materials; silicon; 50 mK; Si-SiGe; arbitrary decoherence degree; ballistic transport; etching; local density of states; magnetic focusing; magnetoconductance; mesoscopic transport; numerical simulations; semiclassical orbits; silicon germanium heterostructure; strained Si cavity; Ballistic transport; Chemical vapor deposition; Electron mobility; Etching; Germanium silicon alloys; Joining processes; Nanoscale devices; Numerical simulation; Orbits; Silicon germanium;
Conference_Titel :
Nanotechnology, 2004. 4th IEEE Conference on
Print_ISBN :
0-7803-8536-5
DOI :
10.1109/NANO.2004.1392260
