Ballistic transport in strained-Si cavities: experiment and theory

Author

Scappucci, G. ; Di Gaspare, L. ; Notargiacomo, A. ; Evangelisti, F. ; Giovine, E. ; Leoni, R. ; Piazza, V. ; Pingue, P. ; Beltram, F. ; Pala, M.G. ; Curatola, G. ; Iannaccone, G.

Author_Institution

Dipt. di Fisica, Univ. Roma Tre, Rome, Italy

fYear

2004

fDate

16-19 Aug. 2004

Firstpage

92

Lastpage

94

Abstract

In this paper, we present the observation of ballistic transport in strained silicon cavities defined by etching on a silicon germanium heterostructure, demonstrated by magnetic focusing of conductance of the cavity at T=50 mK. Numerical simulations, based on a novel approach which allows to include an arbitrary degree of decoherence in mesoscopic transport, show that magnetoconductance features can be related to the semiclassical orbits by means of the local density of states in the cavity.

Keywords

Ge-Si alloys; ballistic transport; electronic density of states; elemental semiconductors; etching; magnetoresistance; mesoscopic systems; numerical analysis; semiconductor heterojunctions; semiconductor materials; silicon; 50 mK; Si-SiGe; arbitrary decoherence degree; ballistic transport; etching; local density of states; magnetic focusing; magnetoconductance; mesoscopic transport; numerical simulations; semiclassical orbits; silicon germanium heterostructure; strained Si cavity; Ballistic transport; Chemical vapor deposition; Electron mobility; Etching; Germanium silicon alloys; Joining processes; Nanoscale devices; Numerical simulation; Orbits; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2004. 4th IEEE Conference on

Print_ISBN

0-7803-8536-5

Type

conf

DOI

10.1109/NANO.2004.1392260

Filename

1392260