DocumentCode
2532217
Title
Ballistic GaInAs/AlInAs devices technology and characterization at room temperature
Author
Roelens, Yannick ; Bollaert, S. ; Pichonat, E. ; Wallart, Xavier ; Cappy, A. ; Mateos, Javier ; Gonzales, T.
fYear
2004
fDate
16-19 Aug. 2004
Firstpage
98
Lastpage
100
Abstract
We have developed technology based on GaInAs/AlInAs for building ballistic devices working at room temperature. We first present here processes for passive and active devices (T-branch junctions (TBJs), Y-branch junctions (YBJs) and TBJs with Schottky gates. Then, we present DC characterization of TBJs to prove the ballistic behaviour and new results for YBJs.
Keywords
III-V semiconductors; aluminium compounds; ballistic transport; gallium arsenide; indium compounds; nanolithography; semiconductor devices; sputter etching; 293 to 298 K; DC measurements; GaInAs-AlInAs; Schottky gates; T-branch junctions; Y-branch junctions; active devices; ballistic GaInAs-AlInAs devices; nanolithography; passive devices; reactive ion etching; room temperature; Bit rate; Data processing; Frequency; Hydrogen; Indium gallium arsenide; Indium phosphide; Nanolithography; Resists; Temperature; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology, 2004. 4th IEEE Conference on
Print_ISBN
0-7803-8536-5
Type
conf
DOI
10.1109/NANO.2004.1392262
Filename
1392262
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