Title :
The effect of multi active junctions on broadband emission from InAs/InGaAlAs quantum-dash structure
Author :
Tan, C.L. ; Djie, H.S. ; Tan, C.K. ; Hongpinyo, V. ; Ding, Y.H. ; Ooi, B.S.
Author_Institution :
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
Abstract :
We demonstrate the importance of multi active layer stacking in realizing a semiconductor broadband quantum-dash-in-well laser. The photoluminescence measurements show the negligible factor of largely localized inhomogeneous quantum-dash ensembles in producing ultra-wide envelope of emission.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; photoluminescence; quantum dash lasers; quantum well lasers; InAs-InGaAlAs; broadband emission; inhomogeneous quantum-dash ensemble; multi active junctions; multi active layer stacking; nonlinear crystals; photoluminescence measurement; quasisupercontinuum laser; semiconductor broadband quantum-dash-in-well laser; Biomedical measurements; Chemical lasers; Chemical technology; Extraterrestrial measurements; Fiber lasers; Gas lasers; Optical fiber dispersion; Photoluminescence; Quantum computing; Semiconductor lasers;
Conference_Titel :
LEOS Annual Meeting Conference Proceedings, 2009. LEOS '09. IEEE
Conference_Location :
Belek-Antalya
Print_ISBN :
978-1-4244-3680-4
Electronic_ISBN :
1092-8081
DOI :
10.1109/LEOS.2009.5343093
