Title :
A 2D analytical model of the channel potential and threshold voltage of Double-Gate (DG) MOSFETs with vertical Gaussian doping profile
Author :
Tiwari, Pramod Kumar ; Kumar, Surendra ; Mittal, Samarth ; Srivastava, Vaibhav ; Pandey, Utkarsh ; Jit, S.
Author_Institution :
Inst. of Technol., Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Abstract :
The paper presents a 2D analytical model for the potential function and threshold voltage of symmetric Double-Gate (DG) MOSFETs with vertical Gaussian doping profile in the channel.
Keywords :
MOSFET; doping profiles; semiconductor device models; semiconductor doping; 2D analytical model; channel potential; double-gate MOSFET; threshold voltage; vertical Gaussian doping profile; Analytical models; Boundary conditions; Doping profiles; Electronic mail; MOSFETs; Microelectronics; Poisson equations; Semiconductor process modeling; Threshold voltage; Ultra large scale integration;
Conference_Titel :
Multimedia, Signal Processing and Communication Technologies, 2009. IMPACT '09. International
Conference_Location :
Aligarh
Print_ISBN :
978-1-4244-3602-6
Electronic_ISBN :
978-1-4244-3604-0
DOI :
10.1109/MSPCT.2009.5164172
