Title :
AlGaN quadruple-band photodetectors
Author :
Gökkavas, Mutlu ; Butun, Serkan ; Caban, Piotr ; Strupinski, Wlodek ; Ozbay, Ekmel
Author_Institution :
Dept. of Phys., Bilkent Univ., Ankara, Turkey
Abstract :
Quadruple back-illuminated ultraviolet metal-semiconductor-metal photodetectors with four different spectral responsivity bands were demonstrated. The average of the full-width at half-maximum (FWHM) of the quantum efficiency peaks was 9.98 nm.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; metal-semiconductor-metal structures; photodetectors; ultraviolet detectors; wide band gap semiconductors; AlGaN; quantum efficiency peaks; spectral responsivity bands; ultraviolet metal-semiconductor-metal photodetectors; Aluminum gallium nitride; Dark current; Detectors; Etching; Filters; Fingers; Fires; MOCVD; Optical device fabrication; Photodetectors;
Conference_Titel :
LEOS Annual Meeting Conference Proceedings, 2009. LEOS '09. IEEE
Conference_Location :
Belek-Antalya
Print_ISBN :
978-1-4244-3680-4
Electronic_ISBN :
1092-8081
DOI :
10.1109/LEOS.2009.5343098
