DocumentCode
2532528
Title
Self-assembled silicon nano-bridges as an enabler for nano-sensors
Author
Kamins, T.I. ; Islam, M. Saif ; Sharma, S. ; Williams, R.Stanley
Author_Institution
Quantum Sci. Res., Hewlett-Packard Labs., Palo Alto, CA, USA
fYear
2004
fDate
16-19 Aug. 2004
Abstract
To build efficient sensors a large sensing area can be achieved by forming a massively parallel set of nanostructures. We have grown laterally oriented, metal-catalyzed silicon nanowires bridging between vertical (111) Si planes formed by anisotropically etching a [110]-oriented silicon wafer. The surrounding silicon can be developed into electrodes. The bridges are mechanically robust and resist significant force. By employing only coarse optical lithography to form the electrodes ("top-down" formation) combined with self-assembled ("bottom-up") fabrication of nanostructures, a large array of nano-scale sensors can be fabricated between biasing electrodes.
Keywords
chemical vapour deposition; elemental semiconductors; etching; nanolithography; nanowires; photolithography; self-assembly; semiconductor growth; sensors; silicon; Si; [110]-oriented silicon wafer; biasing electrodes; etching; mechanical robust; metal catalyzed silicon nanowires bridging; nanosensors; nanostructure fabrication; optical lithography; self-assembled silicon nanobridges; vertical (111) Si planes; Anisotropic magnetoresistance; Electrodes; Etching; Nanostructures; Nanowires; Optical arrays; Optical sensors; Self-assembly; Sensor arrays; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology, 2004. 4th IEEE Conference on
Print_ISBN
0-7803-8536-5
Type
conf
DOI
10.1109/NANO.2004.1392277
Filename
1392277
Link To Document