• DocumentCode
    2532528
  • Title

    Self-assembled silicon nano-bridges as an enabler for nano-sensors

  • Author

    Kamins, T.I. ; Islam, M. Saif ; Sharma, S. ; Williams, R.Stanley

  • Author_Institution
    Quantum Sci. Res., Hewlett-Packard Labs., Palo Alto, CA, USA
  • fYear
    2004
  • fDate
    16-19 Aug. 2004
  • Abstract
    To build efficient sensors a large sensing area can be achieved by forming a massively parallel set of nanostructures. We have grown laterally oriented, metal-catalyzed silicon nanowires bridging between vertical (111) Si planes formed by anisotropically etching a [110]-oriented silicon wafer. The surrounding silicon can be developed into electrodes. The bridges are mechanically robust and resist significant force. By employing only coarse optical lithography to form the electrodes ("top-down" formation) combined with self-assembled ("bottom-up") fabrication of nanostructures, a large array of nano-scale sensors can be fabricated between biasing electrodes.
  • Keywords
    chemical vapour deposition; elemental semiconductors; etching; nanolithography; nanowires; photolithography; self-assembly; semiconductor growth; sensors; silicon; Si; [110]-oriented silicon wafer; biasing electrodes; etching; mechanical robust; metal catalyzed silicon nanowires bridging; nanosensors; nanostructure fabrication; optical lithography; self-assembled silicon nanobridges; vertical (111) Si planes; Anisotropic magnetoresistance; Electrodes; Etching; Nanostructures; Nanowires; Optical arrays; Optical sensors; Self-assembly; Sensor arrays; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology, 2004. 4th IEEE Conference on
  • Print_ISBN
    0-7803-8536-5
  • Type

    conf

  • DOI
    10.1109/NANO.2004.1392277
  • Filename
    1392277