Title :
Self-assembled silicon nano-bridges as an enabler for nano-sensors
Author :
Kamins, T.I. ; Islam, M. Saif ; Sharma, S. ; Williams, R.Stanley
Author_Institution :
Quantum Sci. Res., Hewlett-Packard Labs., Palo Alto, CA, USA
Abstract :
To build efficient sensors a large sensing area can be achieved by forming a massively parallel set of nanostructures. We have grown laterally oriented, metal-catalyzed silicon nanowires bridging between vertical (111) Si planes formed by anisotropically etching a [110]-oriented silicon wafer. The surrounding silicon can be developed into electrodes. The bridges are mechanically robust and resist significant force. By employing only coarse optical lithography to form the electrodes ("top-down" formation) combined with self-assembled ("bottom-up") fabrication of nanostructures, a large array of nano-scale sensors can be fabricated between biasing electrodes.
Keywords :
chemical vapour deposition; elemental semiconductors; etching; nanolithography; nanowires; photolithography; self-assembly; semiconductor growth; sensors; silicon; Si; [110]-oriented silicon wafer; biasing electrodes; etching; mechanical robust; metal catalyzed silicon nanowires bridging; nanosensors; nanostructure fabrication; optical lithography; self-assembled silicon nanobridges; vertical (111) Si planes; Anisotropic magnetoresistance; Electrodes; Etching; Nanostructures; Nanowires; Optical arrays; Optical sensors; Self-assembly; Sensor arrays; Silicon;
Conference_Titel :
Nanotechnology, 2004. 4th IEEE Conference on
Print_ISBN :
0-7803-8536-5
DOI :
10.1109/NANO.2004.1392277