DocumentCode :
2532544
Title :
Electric field dependence of radiative recombination lifetimes in polar InGaN/GaN quantum heterostructures
Author :
Sari, Emre ; Nizamoglu, Sedat ; Lee, In-Hwan ; Baek, Jong-Hyeob ; Demir, Hilmi Volkan
Author_Institution :
Dept. of Electr. & Electron. Eng., Bilkent Univ., Ankara, Turkey
fYear :
2009
fDate :
4-8 Oct. 2009
Firstpage :
606
Lastpage :
607
Abstract :
In conclusion, we studied electric field dependence of radiative recombination lifetime (taur) in polar InGaN/GaN quantum heterostructures. We experimentally and theoretically showed that (taur) decreases with increasing external electric field. As a result of our study, we demonstrated Fermi´s golden rule in polar InGaN/GaN quantum heterostructures.
Keywords :
electron-hole recombination; gallium compounds; indium compounds; photoluminescence; wide band gap semiconductors; InGaN-GaN; electric field dependence; polar quantum heterostructures; radiative recombination lifetimes; Charge carrier lifetime; Gallium nitride; Laser excitation; Materials science and technology; Performance evaluation; Photoluminescence; Pulse measurements; Radiative recombination; Steady-state; Wavelength measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
LEOS Annual Meeting Conference Proceedings, 2009. LEOS '09. IEEE
Conference_Location :
Belek-Antalya
ISSN :
1092-8081
Print_ISBN :
978-1-4244-3680-4
Electronic_ISBN :
1092-8081
Type :
conf
DOI :
10.1109/LEOS.2009.5343110
Filename :
5343110
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2532544
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