Analysis of carbon nanotube interconnects and their comparison with Cu interconnects

The carbon nanotube (CNT) bundles have potential to provide an attractive solution for the resistivity and electromigration problems faced by traditional copper interconnects in very deep submicron (VDSM) technology. This paper presents a comprehensive analysis of mixed bundles of CNTs and compares various transmission line model interconnect parameters (R, L, & C) with that of the Cu interconnects at 32nm technology node. Results show that the mixed bundles of CNTs have smaller value of R & C for Intermediate and Global level interconnects. However, for Local interconnects Cu wire has smaller value of R and the value of C is comparable to that of the bundle of CNTs.