Title :
Dynamic sparing and error correction techniques for fault tolerance in nanoscale memory structures
Author :
Jeffery, Casey M. ; Basagalar, Ahmet ; Figueiredo, R.J.O.
Author_Institution :
Florida Univ., Gainesville, FL, USA
Abstract :
This paper describes a memory organization that supports hierarchical, dynamic fault tolerance mechanisms applicable to heterogeneous CMOS/molecular systems. It has been projected that, in such systems, programmable mapping circuitry becomes necessary when the interface between microscale and nanoscale address lines is formed in a non-deterministic manner. This mapping circuitry may double as a means of implementing more advanced forms of reconfiguration and error correction codes useful in detecting and recovering from runtime faults. Computer simulation is used to estimate the effectiveness of various configurations. Results show that dynamic remapping of spare memory rows allows for improvements in reliability over standard error correction codes.
Keywords :
CMOS memory circuits; digital simulation; error correction; error correction codes; fault tolerance; integrated circuit modelling; integrated circuit reliability; memory architecture; molecular electronics; nanoelectronics; computer simulation; error correction codes; error correction technique; fault tolerance; heterogeneous CMOS-molecular systems; hierarchical mechanism; memory organization; microscale address lines; nanoscale address lines; nanoscale memory structures; programmable mapping circuitry; reliability; spare memory rows; Circuit faults; Computer simulation; Electrical fault detection; Error correction; Error correction codes; Fault detection; Fault tolerance; Fault tolerant systems; Nanostructures; Runtime;
Conference_Titel :
Nanotechnology, 2004. 4th IEEE Conference on
Print_ISBN :
0-7803-8536-5
DOI :
10.1109/NANO.2004.1392285