Title :
Growth of ZnSe nanowires by molecular beam epitaxy
Author :
Colli, A. ; Martell, F. ; Rubini, Stephane ; Ducati, C. ; Hofmann, S. ; Ferrari, A.C. ; Robertson, J. ; Franciosi, A.
Author_Institution :
Dept. of Eng., Cambridge Univ., UK
Abstract :
We have grown ZnSe nanowires on Au-coated SiO2 by molecular beam epitaxy. Data are reported for structures grown at 450 and 550°C. High resolution electron microscopy shows that the lower growth temperature gives rise to a higher density of high-quality nanostructures and that nanowires, nanobelts and nanosaws are all present in our samples. ZnSe nanostructures do not grow on the non-coated substrate. Photoluminescence shows a blue component in samples grown at lower temperature.
Keywords :
II-VI semiconductors; molecular beam epitaxial growth; nanotechnology; nanowires; photoluminescence; semiconductor epitaxial layers; semiconductor growth; transmission electron microscopy; zinc compounds; 450 degC; 550 degC; Au-SiO2; Au-coated SiO2 substrate; ZnSe; ZnSe nanostructures; ZnSe nanowires; density; high resolution electron microscopy; molecular beam epitaxy; nanobelts; nanosaws; photoluminescence; Electrons; Gold; Molecular beam epitaxial growth; Nanostructures; Nanowires; Optical microscopy; Photoluminescence; Plasma temperature; Substrates; Zinc compounds;
Conference_Titel :
Nanotechnology, 2004. 4th IEEE Conference on
Print_ISBN :
0-7803-8536-5
DOI :
10.1109/NANO.2004.1392288
