DocumentCode
25328
Title
A 0.85 THz Low Noise Amplifier Using InP HEMT Transistors
Author
Leong, Kevin M. K. H. ; Xiaobing Mei ; Yoshida, Wayne ; Po-Hsin Liu ; Zeyang Zhou ; Lange, Michael ; Ling-Shine Lee ; Padilla, Jose G. ; Zamora, Alexis ; Gorospe, Ben S. ; Nguyen, Khanh ; Deal, William R.
Author_Institution
Northrop Grumman Corp., Redondo Beach, CA, USA
Volume
25
Issue
6
fYear
2015
fDate
Jun-15
Firstpage
397
Lastpage
399
Abstract
In this letter, the first packaged THz solid-state amplifier operating at 0.85 THz is reported. The InP HEMT amplifier achieves a noise figure as low as 11.1 dB with an associated gain of 13.6 dB at 0.85 THz using high fMAX InP HEMT transistors in a 10-stage coplanar waveguide integrated circuit. Output power up to 0.93 mW is measured.
Keywords
MMIC amplifiers; coplanar waveguides; high electron mobility transistors; indium compounds; integrated circuits; low noise amplifiers; 10-stage coplanar waveguide integrated circuit; HEMT transistors; InP; frequency 0.85 THz; gain 13.6 dB; low noise amplifier; solid-state amplifier; Electromagnetic waveguides; Gain; HEMTs; Indium phosphide; Noise; Temperature measurement; Coplanar waveguide (CPW); HEMT; MM-Wave; MMIC; low noise amplifier (LNA); sub-millimeter wave;
fLanguage
English
Journal_Title
Microwave and Wireless Components Letters, IEEE
Publisher
ieee
ISSN
1531-1309
Type
jour
DOI
10.1109/LMWC.2015.2421336
Filename
7084690
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