Title :
Si/SiGe heterojunction bipolar transistors with current gains up to 5000
Author :
Schreiber, H. ; Bosch, B.G.
Author_Institution :
Mikroelektronik-Zentrum, Ruhr-Univ. Bochum, West Germany
Abstract :
Si-SiGe heterojunction bipolar transistors were fabricated in a process including 900 degrees C processing. The current gain beta reaches 5000 for 30- mu m-wide emitters. Surface recombination reduces beta in narrow-emitter transistors. Recombination centers, essentially in the base layer, affect beta and may degrade the DC output characteristics. The transit frequency was measured to be 12 GHz at V/sub CE/=3 V.<>
Keywords :
Ge-Si alloys; electron-hole recombination; elemental semiconductors; heterojunction bipolar transistors; semiconductor materials; silicon; solid-state microwave devices; 12 GHz; 30 micron; 900 degC; DC output characteristics; Si-SiGe; current gain; heterojunction bipolar transistors; microwave devices; narrow-emitter transistors; recombination centres; surface-recombination; transit frequency; Bipolar transistors; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Photonic band gap; Semiconductor device doping; Silicon germanium; Sputter etching; Temperature; Wet etching;
Conference_Titel :
Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1989.74362
