Long-range ordered self-assembled InAs quantum dots on [110] GaAs grown with molecular beam epitaxy

Author

Schuh, D. ; Bauer, J. ; Schulz, R. ; Uccelli, E. ; Hofbauer, E. ; Kress, A. ; Finley, J.J. ; Abstreiter, G.

Author_Institution

Walter Schottky Inst., Technische Univ. Munchen, Garching, Germany

fYear

2004

fDate

16-19 Aug. 2004

Firstpage

189

Lastpage

191

Abstract

We report on a new approach for positioning of self-assembled InAs quantum dots on [110] GaAs with nanometer precision. By combining self-assembly of quantum dots with molecular beam epitaxy on in-situ cleaved surfaces we have successfully fabricated arrays of long-range ordered InAs quantum dots. Atomic force microscopy measurements demonstrate the ability to control size, position, and ordering of the quantum dots. Furthermore, single dot microphotoluminescence investigations confirm the high optical quality of the fabricated quantum dots.

Keywords

III-V semiconductors; atomic force microscopy; indium compounds; long-range order; molecular beam epitaxial growth; nanotechnology; photoluminescence; self-assembly; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum dots; GaAs; InAs; InAs quantum dots; [110] GaAs substrate; atomic force microscopy measurements; cleaved surfaces; high optical quality; long-range order; molecular beam epitaxial growth; self-assembly; single dot microphotoluminescence; Atomic force microscopy; Atomic layer deposition; Atomic measurements; Force measurement; Gallium arsenide; Molecular beam epitaxial growth; Position measurement; Quantum dots; Self-assembly; Size measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2004. 4th IEEE Conference on

Print_ISBN

0-7803-8536-5

Type

conf

DOI

10.1109/NANO.2004.1392292

Filename

1392292