Robustness of readout devices for Si-based quantum computing

Author

Lee, Kwan Hee ; Greentree, Andrew D. ; Chan, Victor ; Buehler, Tilo M. ; Brenner, Rolf ; Dzurak, Andrew S. ; Hamilton, Alex R. ; Clark, Robert G.

Author_Institution

Sch. of Phys. & Electr. Eng., New South Wales Univ., Australia

fYear

2004

fDate

16-19 Aug. 2004

Firstpage

210

Lastpage

212

Abstract

In various Si-based quantum computer (QC) architectures the single electron transistor (SET) has been proposed for qubit state readout. Using a metal double dot device the effects of misalignment and linewidth variation on device performance were investigated. Results from computational modeling, coupled with experiment, indicates that misalignment affects the bias required to transfer an electron across the double dot, while linewidth variation influences the SET sensitivity.

Keywords

elemental semiconductors; nanolithography; quantum computing; readout electronics; semiconductor device models; silicon; single electron transistors; Si; Si-based quantum computing; computational modeling; electron transfer bias; linewidth variation; lithography misalignment; metal double dot device; quantum computer architectures; qubit state readout; readout devices; sensitivity; single electron transistor; Australia; Charge transfer; Computer architecture; Fabrication; Physics computing; Quantum computing; Quantum dots; Robustness; Scanning electron microscopy; Semiconductor devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2004. 4th IEEE Conference on

Print_ISBN

0-7803-8536-5

Type

conf

DOI

10.1109/NANO.2004.1392300

Filename

1392300