DocumentCode :
2533120
Title :
Statistical design of a multiplier using a low voltage square-law CMOS cell
Author :
Tarim, Tuna B. ; Kuntman, H. Hakan ; Ismail, Mohammed
Author_Institution :
Dept. of Electron. Eng., Istanbul Tech. Univ., Turkey
fYear :
1998
fDate :
24-27 Nov 1998
Firstpage :
25
Lastpage :
28
Abstract :
The statistical design of a new multiplier using the square-law characteristics of MOS transistors in the saturation region is discussed in this paper. The multiplier is statistically robust and has a good yield. Initial simulation results of the circuit have been given and the offset current and nonlinearity of the multiplier has been statistically examined. Response Surface Methodology and Design of Experiment techniques were used as statistical VLSI design tools combined with the statistical MOS model. Device size optimization and yield enhancement have been demonstrated
Keywords :
CMOS analogue integrated circuits; VLSI; analogue multipliers; design of experiments; integrated circuit design; statistical analysis; surface fitting; LV square-law CMOS cell; MOS transistors; design of experiment techniques; device size optimization; low voltage CMOS cell; nonlinearity; offset current; response surface methodology; saturation region; square-law characteristics; statistical MOS model; statistical VLSI design tools; statistical design; yield enhancement; Circuit simulation; Frequency response; Low voltage; MOSFETs; Power supplies; Process design; Semiconductor device modeling; Threshold voltage; Transconductance; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 1998. IEEE APCCAS 1998. The 1998 IEEE Asia-Pacific Conference on
Conference_Location :
Chiangmai
Print_ISBN :
0-7803-5146-0
Type :
conf
DOI :
10.1109/APCCAS.1998.743649
Filename :
743649
Link To Document :
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